Semiconducting chalcogenide buffer layer for oxide heteroepitaxy on Si„001..
نویسندگان
چکیده
We report controlled laminar growth of a crystalline transition metal oxide on Si 001 without SiOx or silicide formation by utilizing the chalcogenide semiconductor gallium sesquiselenide Ga2Se3 as a nonreactive buffer layer. Initial nucleation of both pure and Co-doped anatase TiO2 is along Ga2Se3 nanowire structures, coalescing to a flat, multidomain film within two molecular layers. Arsenic-terminated Si 001 Si 001 :As is stable against pure O2, but oxidizes when both Ti and O2 are present. The Si–TiO2 valence band offset using either buffer layer is about 2.8 eV, producing a staggered band alignment. © 2006 American Institute of Physics. DOI: 10.1063/1.2199451
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